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| New Product SUD40N02-3m3P Vishay Siliconix N-Channel 20-V (D-S), 175 C MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) () 0.0033 at VGS = 10 V 0.0044 at VGS = 4.5 V ID (A)a 40 40 Qg (Typ) 30 nC FEATURES * TrenchFET(R) Power MOSFET * 100 % Rg Tested RoHS COMPLIANT APPLICATIONS * Server TO-252 D Drain Connected to Tab G D S G Top View S Order Number: SUD40N02-3M3P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C) TC = 100 C TA = 25 C TA = 100 C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 C TA = 25 C TC = 25 C Maximum Power Dissipation TC = 100 C TA = 25 C TA = 100 C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 20 20 40a 40a 24.4b 17.2b 100 40a 2.8b 79 39.5 3.3b 1.6 b Unit V A W - 55 to 175 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Steady State Steady State Maximum Junction-to-Case Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. Symbol RthJA RthJC Typical 37 1.5 Maximum 45 1.9 Unit C/W Document Number: 69819 S-80260-Rev. A, 04-Feb-08 www.vishay.com 1 New Product SUD40N02-3m3P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = 50 A, di/dt = 100 A/s, TJ = 25 C IS = 20 A 0.81 38 34 18 20 TC = 25 C VDD = 10 V, RL = 0.2 ID 50 A, VGEN = 10 V, Rg = 1 VDD = 10 V, RL = 0.2 ID 50 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 50 A VDS = 10 V, VGS = 4.5 V, ID = 50 A VDS = 10 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 100 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 30 0.0027 0.0036 100 6520 1430 770 105 50 17 14 1.2 40 30 67 33 13 7 40 9 1.9 60 45 101 50 20 11 60 14 40 100 1.2 57 51 ns 160 75 nC pF 0.0033 0.0044 1 20 21 - 6.9 3 100 1 20 V mV/C V nA A A S Symbol Test Conditions Min. Typ. Max. Unit Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time A V ns nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69819 S-80260-Rev. A, 04-Feb-08 New Product SUD40N02-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 80 VGS = 10 thru 4 V 2.4 60 I D - Drain Current (A) I D - Drain Current (A) 1.8 3.0 TC = - 55 C 40 VGS = 3 V 1.2 TC = 25 C 20 0.6 TC = 125 C VGS = 2 V 0 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0040 r DS(on) - D to S On-Resistance () 0.010 Transfer Characteristics ID = 20 A 0.0036 VGS = 4.5 V r DS(on) - On-Resistance () 0.008 0.006 TA = 125 C 0.004 0.0032 0.0028 VGS = 10 V 0.002 TA = 25 C 0.0024 0 20 40 60 80 100 0.000 2 4 6 8 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 8000 Ciss VGS - Gate-to-Source Voltage (V) 8 6000 C - Capacitance (pF) 10 On-Resistance vs. VGS vs. Temperature ID = 50 A VDS = 10 V 6 VDS = 16 V 4000 4 2000 Coss 2 Crss 0 0 4 8 12 16 20 0 0 20 40 60 80 100 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 69819 S-80260-Rev. A, 04-Feb-08 Gate Charge www.vishay.com 3 New Product SUD40N02-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.7 ID = 20 A 1.5 r DS(on) - On-Resistance VGS = 10 V, 4.5 V (Normalized) 1.3 I S - Source Current (A) TJ = 150 C 10 100 1.1 TJ = 25 C 0.9 0.7 - 50 - 25 0 25 50 75 100 125 150 175 1 0.0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 2.4 200 Forward Diode Voltage vs. Temperature 2.0 150 VGS(th) (V) 1.6 ID = 250 A Power (W) 100 1.2 50 0.8 0.4 - 50 - 25 0 25 50 75 100 125 150 175 0 0.01 0.1 1 Time (s) 10 100 TJ - Temperature (C) Threshold Voltage 250 1000 Single Pulse Power, Junction-to-Ambient 100 I D - Drain Current (A) 200 Power (W) Limited by rDS(on)* 1 ms 10 10 ms 100 ms 1s 10 s DC 150 1 0.1 100 0.01 TA = 25 C Single Pulse 50 0.001 0.01 0.1 Time (s) 1 10 0.001 0.01 0.1 1 BVDSS 10 100 Single Pulse Power, Junction-to-Case VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69819 S-80260-Rev. A, 04-Feb-08 New Product SUD40N02-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1000 Limited by rDS(on)* 24 I D - Drain Current (A) 1 ms 10 ms DC 30 100 I D - Drain Current (A) 10 18 1 12 0.1 0.01 TA = 25 C Single Pulse 0.001 0.01 BVDSS 6 0 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified 0 25 50 75 100 125 150 175 TA - Ambient Temperature (C) Safe Operating Area, Junction-to-Case 150 4 Current Derating**, Junction-to-Ambient 120 3 I D - Drain Current (A) 90 Power (W) 2 60 Package Limited 1 30 0 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 150 175 TC - Case Temperature (C) TA - Ambient Temperature (C) Current Derating**, Junction-to-Case 100 Power Derating**, Junction-to-Ambient 80 Power (W) 60 40 20 ** The power dissipation PD is based on TJ(max) = 175 C, using 0 0 25 50 75 100 125 150 175 junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. TC - Case Temperature (C) Power Derating**, Junction-to-Case Document Number: 69819 S-80260-Rev. A, 04-Feb-08 www.vishay.com 5 New Product SUD40N02-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 Notes: PDM t1 0.1 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70 C/W t1 t2 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69819. www.vishay.com 6 Document Number: 69819 S-80260-Rev. A, 04-Feb-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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